SF10G41A - Toshiba Semiconductor

SF10G41A SILICON PLANAR TYPE THYRISTOR

www.DataSheet4U.com SF10G41A,SF10J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G41A,SF10J41A MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Gate Trigger Current : IT (AV) = 10A : IGT = 15mA (Max.) Unit: mm MAXIMUM RATINGS CHARACTERISTIC.

Features

Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB SC−46 13−10G1B 1 2001-07-10 www.DataSheet4U.com SF10G41A,SF10J41A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD d.