SEMiX202GB066HDs - Semikron International

SEMiX202GB066HDs Trench IGBT

SEMiX202GB066HDs SEMiX® 2s Trench IGBT Modules SEMiX202GB066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliab.

Features

• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature coefficient
• UL recognised file no. E63532 Typical Applications
*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
• For short circuit: Soft RGoff recommended
• Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES.