SDU9916 - SamHop Microelectronics Corp.

SDU9916 N-Channel E nhancement Mode F ield E ffect Transistor

S DU/D9916 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) TYP ID 20A R DS (ON) S uper high dense cell design for low R DS (ON ). 25 @ V G S = 4.5V 35 @ V G S = 2.7V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R.

Features

CTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 8V, V DS =0V V DS = V GS , ID = 250uA V GS =4.5V, ID = 6.0A V GS =2.5V, ID = 5.2A V DS = 5V, V GS = 4.5V V DS = 10V, ID = 6.0A Min Typ C Max Unit 20 1 V uA 100 nA 0.9 1.0 25 35 20 7 24 650 270 80 1.5 30 40 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S .