SDT7B04 - INCHANGE

SDT7B04 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·DC Current Gain- : hFE= 20~250(Min.)@IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output,regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.

Features

ss otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collector Cutoff Current VCE= 20V; IB=0 hFE DC Current Gain IC= 2.5A; VCE= 3V MIN MAX UNIT 140 V 1.5 V 1.2 V 1.0 mA 20 250 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our pr.