SDT2P02-C - SeCoS

SDT2P02-C Dual-P Enhancement Mode MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation. DFN2x2-6L-J FEATURES Low RDS(on) Trench Technology Low Thermal Impedance Fast Switching Speed APPLICATIONS Battery-Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players M.

Features

Low RDS(on) Trench Technology Low Thermal Impedance Fast Switching Speed APPLICATIONS Battery-Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players MARKING 2P02 = Date Code PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 1.90 2.10 1.90 2.10 0.675 0.80 0.25 0.35 0.75 1.10 0.65 TYP. REF. G H J K L P Millimeter Min. Max. 0.25 0.35 0.20 BSC. - 0.06 0.15 0.25 0.20 0.38 0.52 0.72 ORDER INFORMATION Part Number Type SDT2P02-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C.