SDP65N03L - SamHop Microelectronics

SDP65N03L N-Channel Logic Level E nhancement Mode Field E ffect Transistor

S DP /B 65N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) Max ID 62A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 9 @ V G S = 10V 15 @ .

Features

com 2 C /W C /W 62.5 S DP /B 65N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS b S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 26A V GS = 4.5V, ID = 21A V DS = 10V, V GS = 10V V DS = 10V, ID = 26A Min Typ C Max Unit 30 10 V uA 100 nA 1 1.5 8 12 65 38 1350 625 190 3 9 V m ohm 4 ON CHAR ACTE R IS TIC.