SDM9926 - SamHop Microelectronics

SDM9926 Dual N-Channel Enhancement Mode Field Effect Transistor

( DataSheet : www.DataSheet4U.com ) S DM9926 S amHop Microelectronics C orp. Apr,27 2005 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON ). 30 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount .

Features

5 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.0V, ID = 5A V GS = 2.5V, ID = 5A V DS = 5.0V, ID = 6.0A Min Typ C Max Unit 20 1 V uA 100 nA 0.6 25 35 11 910 190 150 30 40 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance S PF PF PF DYNAMIC CHA.