Dual 650V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C. Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage Isolation Voltage DC Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation Maximum Case Temperature Maximum Junction Temperature Operating Temperat.
VRRM 650V IF @ 125°C 50A BACKSIDE ISOLATION SMALL FOOTPRINT ZERO REVERSE RECOVERY PLASTIC COTS PACKAGING BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES D2 2 D1 1 ORDERING GUIDE Part Number SDD50065SHD Description Dual 650V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C. Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage Isolation Voltage DC Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation Ma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SDD50N03L |
SamHop Microelectronics |
N-Channel Logic Level E nhancement Mode Field Effect Transistor | |
2 | SDD01N70 |
SamHop Microelectronics |
N-Channel MOSFET | |
3 | SDD02N25 |
SamHop Microelectronics |
N-Channel MOSFET | |
4 | SDD02N60 |
SamHop Microelectronics |
N-Channel MOSFET | |
5 | SDD02N70 |
SamHop Microelectronics |
N-Channel MOSFET | |
6 | SDD03N04 |
SamHop Microelectronics |
N-Channel MOSFET | |
7 | SDD03N50 |
SamHop Microelectronics |
N-Channel MOSFET | |
8 | SDD03N70 |
SamHop Microelectronics |
N-Channel MOSFET | |
9 | SDD04N60 |
SamHop Microelectronics |
N-Channel MOSFET | |
10 | SDD04N65 |
SamHop Microelectronics |
N-Channel MOSFET | |
11 | SDD04S60 |
Infineon Technologies |
Silicon Carbide Schottky Diode | |
12 | SDD05N04 |
SamHop Microelectronics |
N-Channel MOSFET |