SDB60N03L - SamHop Microelectronics

SDB60N03L N-Channel Logic Level E nhancement Mode Field E ffect Transistor

S DP /B 60N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. ID 56A R DS (on) ( m W ) Max 11 @ V G S = 10V 19 @ V.

Features

LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) 4 Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS b Condition V GS = 0V, ID = 250uA V DS = 24V, V GS =0V V GS = 16V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 30A V GS = 4.5V, ID = 24A V GS = 10V, V DS = 10V V DS = 10V, ID = 26A Min Typ Max Unit 30 10 100 V uA nA V ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Curre.