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SDB310Q - SEMTECH

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SDB310Q SCHOTTKY BARRIER DIODE

Cathode Anode 12 G Top View Marking Code: "G" Simplified outline SOD-523 and symbol Symbol VR IF IFRM IFSM PD Tj Ts Value 30 0.2 0.5 2 150 150 - 55 to + 150 Unit V A A A mW OC OC Symbol VF IR CT trr Max. 0.4 0.5 1 10 5 Unit V µA pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong .

Features


• Low power rectified
• Silicon epitaxial type
• High reliability Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 30 mA Reverse Current at VR = 30 V Total Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IRR = 1 mA, RL = 100 Ω PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 G Top View Marking Code: "G" Simplified outli.

The same part from a different manufacturer

Datasheet SDB310Q - AUK SDB310Q

Semiconductor Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No.

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