Cathode Anode 12 G Top View Marking Code: "G" Simplified outline SOD-523 and symbol Symbol VR IF IFRM IFSM PD Tj Ts Value 30 0.2 0.5 2 150 150 - 55 to + 150 Unit V A A A mW OC OC Symbol VF IR CT trr Max. 0.4 0.5 1 10 5 Unit V µA pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong .
• Low power rectified
• Silicon epitaxial type
• High reliability
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 10 mA at IF = 30 mA Reverse Current at VR = 30 V Total Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IRR = 1 mA, RL = 100 Ω
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
G
Top View Marking Code: "G" Simplified outli.
Semiconductor Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SDB3101 |
KODENSHI |
General Purpose Schottky Barrier Diode | |
2 | SDB3101 |
AUK |
Schottky barrier diode | |
3 | SDB3101F |
KODENSHI |
General Purpose Schottky Barrier Diode | |
4 | SDB3101F |
AUK |
Schottky barrier diode | |
5 | SDB310D |
KODENSHI |
General Purpose Schottky Barrier Diode | |
6 | SDB310D |
AUK |
Schottky barrier diode | |
7 | SDB310WA |
KODENSHI |
General Purpose Schottky Barrier Diode | |
8 | SDB310WA |
AUK |
Schottky Barrier Diode | |
9 | SDB310WAF |
AUK |
Schottky Barrier Diode | |
10 | SDB310WAF |
KODENSHI |
General Purpose Schottky Barrier Diode | |
11 | SDB310WAU |
AUK |
Schottky Barrier Diode | |
12 | SDB310WAU |
KODENSHI |
General Purpose Schottky Barrier Diode |