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SDB110 - LGE

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SDB110 Schottky Barrier Bridge Rectifiers

SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC/ 10 seconds at te.

Features

Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC/ 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band .047(1.20) .040(1.02) .205(5.2) .195(5.0) DBS .335(8.51) .320(8.13) 450 .013(0.33) .0088(0.22) .404(10.3) .386(9.80) .255(6.5) .245(6.2) .130(3.30) .120(3.05) .060(1.53) .040(1.02) .013(0.3.

The same part from a different manufacturer

Datasheet SDB110 - Taiwan Semiconductor Company SDB110

SDBS12 THRU SDBS110 1.0 AMP. Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere Features Meta.

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