SD1650 - STMicroelectronics

SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

Designed for 900 MHz cellular radio base station applications, the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching result in terminal impedance levels easily handled by the circuit designer. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emi.

Features

esistance 1.5 °C/W
*Applies only to rated RF amplifier operation August 1992 1/5 SD1650 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO BVCES BVCEO www.DataSheet4U.com I CEO IC = 50mA IE = 20mA IC = 100mA IC = 100mA VCE = 24V VCE = 5V IC = 6A 60 3.0 60 28 — 20 — — — — — — — — — — 10 200 V V V V mA — hFE DYNAMIC Symbol Test Conditions Valu e Min. Typ. Max. Unit POUT ηc GP VSWR f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz PIN = 12 W PIN = 12 W PIN = 12 W PIN = 12 W ICQ = 300 mA ICQ = 300 mA ICQ = 300 mA 60 45 7 3.