SD1487 - ST Microelectronics

SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

The SD1487 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-theart diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter .

Features

bol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE DYNAMIC Symbol IC = 100mA IC = 100mA IC = 100mA IE = 20mA VCE = 15V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 5A 36 36 18 4.0 — 10 — — — — — — — — — — 20 200 V V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT GP IMD3
* COB
*Note: f f = 30 MHz f = 30 MHz f = 1 MHz VCE = 12.5 V VCE = 12.5 V VCB = 12.5 V ICQ = 150mA ICQ = 150mA ICQ = 150mA 100 11 — — — 13 — 400 — — −30 — W dB dBc pF POUT = 100WPEP VCE = 12.5 V 30 + 30.001MHz = TYPICAL PERFORMANCE POWER GAIN & COLLECTOR EFF.