Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The SD1448 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V. Gold metallization and emitter ballasting assure high reliability under Class A linear amplifier operation. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. B.
n SD1448 (TCC598) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO I CBO hFE IC = 10mA IC = 20mA IE = 2.5mA VCB = 28V VCE = 20V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 500mA 45 25 3.0 — 10 — — — — — — — — 0.9 — V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit P OUT 1 GP2 IMD33 COB Note 1: P IN f = 860 MHz f = 860 MHz PSYNC = 4 W f = 1 MHz = 0.8W VCE = 25 V VCE = 25 V VCE = 25 V VCB = 25 V IC = 850 mA IC = 850 mA IC = 850 mA 4.0 7.0 — — — — — — — — −60 20 W dB dBc pF Note 2: P OUT = 4W .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1441 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 2 | SD1444 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 3 | SD1444 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 4 | SD1446 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 5 | SD1446 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 6 | SD1449 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 7 | SD14-100-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|
| 8 | SD14-101-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|
| 9 | SD14-102-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|
| 10 | SD14-150-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|
| 11 | SD14-151-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|
| 12 | SD14-1R2-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|