100V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max lD Gate-Source Voltage Continuous Drain Current PD TJ, TSTG Maximum Power Dissipation Junction Temperature, Operating and Storage ΘJC Thermal Resistance, junction-to-case TL Lead Temperature TEST CONDITIONS soldering, 10s .
LOW THERMAL RESISTANCE OPTIMIZED FOR FAST SWITCHING TO-258 OR TO-254 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND SERVO CONTROLS SD11461 N-Channel Power MOSFET - 1 VDS = 100V 1-D ID @ 25°C = 35A RDS(on) = 25mΩ 3-G 2-S ORDERING GUIDE Part Number SD11461-1 SD11461-2 TO-258 TO-254 Description 100V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max lD Ga.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD11428 |
Solitron Devices |
1200V Silicon Carbide IGBT | |
2 | SD1143 |
SGS-Thomson |
(SD1xxx) Transistors | |
3 | SD1143 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS | |
4 | SD1143 |
HGSemi |
HG RF POWER TRANSISTOR | |
5 | SD1143 |
ASI |
NPN SILICON RF POWER TRANSISTOR | |
6 | SD1143 |
Microsemi |
RF & MICROWAVE TRANSISTORS | |
7 | SD1143-01 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS | |
8 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS | |
9 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version | |
10 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers | |
11 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors | |
12 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |