SCT50N120 - STMicroelectronics

SCT50N120 Silicon carbide Power MOSFET

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with .

Features

 Very tight variation of on-resistance vs. temperature
 Very high operating junction temperature capability (TJ = 200 °C)
 Very fast and robust intrinsic body diode
 Low capacitance Applications Figure 1: Internal schematic diagram
 Solar inverters, UPS
 Motor drives
 High voltage DC-DC converters
 Switch mode power supplies D(2, TAB) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performan.