SCT20N170AG - STMicroelectronics

SCT20N170AG Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP.

Features

Order code SCT20N170AG VDS 1700 V RDS(on) typ. 64 mΩ ID 43 A HiP247 3 2 1
• AEC-Q101 rev. C qualified
• Very fast and robust intrinsic body diode
• Low capacitances
• Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching perfo.