SCS40STN - SeCoS Halbleitertechnologie

SCS40STN Silicon Epitaxial Planar Schottky Barrier Rectifiers

Planar Schottky barrier diode with an integrated guard ring for stress protection L C WBFBP-02C FEATURES ● ● ● ● Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage M B A E F D J H M G K APPLICATION ● ● ●  REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 .

Features

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● Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage M B A E F D J H M G K APPLICATION
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●  REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 REF. G H J K L M  Millimeter Min. Max. 0.275 0.325 0.275 0.325 0.275 0.325 0.675 0.725 0.010 0.070 0.010 REF. Ultra high-speed switching Voltage clamping Mobile communication ,digital (still) cameras , PDAs and PCMCIA cards MARKING S6 PACKAGE INFORMATION Package WBFBP-02C MPQ 10K Leader Size 7 inch MAXIMUM RATINGS CHARACTERISTICS(TA=25°C .