SCS220AE SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 20A 31nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Di.
1) Shorter recovery time
650V 20A 31nC
TO-247
(1) (2)
(3)
lInner circuit
2) Reduced temperature dependence 3) High-speed switching possible
(1) N/C (2) Cathode (3) Anode
(1) (2) (3)
lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 20
* 71
* Surge no repetitive forward current IFSM
1 2 3
Tube 30 C SCS220AE
Reel size (mm) Tape width.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SCS220AE2 |
ROHM |
SiC Schottky Barrier Diode | |
2 | SCS220AE2HR |
ROHM |
Automotive Grade SiC Schottky Barrier Diode | |
3 | SCS220AJ |
Rohm |
SiC Schottky Barrier Diode | |
4 | SCS220AM |
ROHM |
SiC Schottky Barrier Diode | |
5 | SCS220KE2 |
ROHM |
SiC Schottky Barrier Diode | |
6 | SCS220KE2HR |
ROHM |
Automotive Grade SiC Schottky Barrier Diode | |
7 | SCS220KGHR |
ROHM |
Automotive Grade SiC Schottky Barrier Diode | |
8 | SCS220P |
SeCoS |
Schottky Barrier Rectifiers | |
9 | SCS221T |
SeCoS Halbleitertechnologie |
20V 0.1A Plastic-Encapsulated Switching Diode | |
10 | SCS222DSTL |
SeCoS |
Switching Diode | |
11 | SCS222NT |
SeCoS |
Switching Diode | |
12 | SCS222PT |
SeCoS |
Switching Diode |