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SCS140AE2 - ROHM

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SCS140AE2 SiC Schottky Barrier Diode

SiC Schottky Barrier Diode SCS140AE2 lApplications Switching power supply lDimensions (Unit : mm) lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-247 lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Un.

Features

1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-247 lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
*6 Surge no repetitive forward current
*6 Repetitive peak forward current
*6 Total power disspation
*6 Junction temperature VRM VR IF IFSM IFRM PD Tj 600 600 20 / 40
*1 76 / 152
*2 300 / 600
*3 72 / 121
*4 120 / 210
*5 175 V V A A A A W °C Range of storage temperature .

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