SCP-4926 - Sensitron

SCP-4926 HV MOSFET Power Module

3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL V (BR)DSS IDSS (AT Tj=250C UNLESS OTHERWISE SPECIFIED) CONDITION V GS =0V,ID=0.5 mA, Tj = 25 oC V GS =0V, V DS=1000V, Tj = 25 oC V DS=1000V, Tj = 125 oC V GS =10V TC = 25 oC V DS = V GS ID = 0.50mA V GS = 10 V, ID = 0.80 A V DS = 25 V, V GS = 0 V, f = 1 MHz V GS.

Features

al Resistance Nominal Gate-to-source Zener Breakdown Voltage, IZ = 1mA Operating and Storage Junction Temperature Operating Case Temperature Pin-To-Base plate Voltage Isolation Forward Voltage Reverse Recovery Time ID IDM V GS(th) RDS Ciss Coss Crss QG td(on) tr td(off) tf Rthjc VZ Tj Tj V iso VF trr 2.0 - - 500 52 17 38 10 17 58 31 ±18.0 - nC ns ±17.5 -40 -40 1 minute, at sea level IF = 1A Tj = 25 oC, IF = 1 A, di/dt = 50 A/ µs, V rr=400V - 3.7 ±19.0 100 100 10,000 o C/W V o C o C V V ns DIODE CHARACTERISTICSD1, D2, D3 1.1 150 GATE DRIVE MOSFETs Q7,…,18 (1) CHARACTERISTICS Turn.