Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM S.
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.80 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 3.5 A RF CHARACTERISTICS ( SYMBOL G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SC70-5 |
Zetex Semiconductors |
Surface mounted / 5 pin package Package outline | |
2 | SC70-6 |
Zetex Semiconductors |
Surface mounted / 5 pin package Package outline | |
3 | SC7001Q |
Silan Microelectronics |
3 3/4-DIGIT 3260-COUNT A/D CONVERTER | |
4 | SC704 |
Semtech |
Very Low Ron Load Switch | |
5 | SC705 |
Semtech |
Very Low Ron Load Switch | |
6 | SC706 |
Zetex Semiconductors |
OUTLINE DRAWING FOR SC7606 LEAD | |
7 | SC70E6 |
Siemens Semiconductor |
SUB-MICTON GENERATION OF CHANNELLESS GATE-ARRAYS BASED | |
8 | SC7106 |
Silan Microelectronics |
(SC7106 / SC7107) A/D CONVERTERS | |
9 | SC7107 |
Silan Microelectronics |
(SC7106 / SC7107) A/D CONVERTERS | |
10 | SC721 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
11 | SC724 |
Semtech |
Very Low Ron Load Switch | |
12 | SC725 |
Semtech |
Very Low Ron Load Switch |