The SC1205H is a cost effective, High Drive Voltage, Dual MOS.ET Driver designed for switching High and Low side Power MOS.ETs. Each driver is capable of Ultrafast rise/fall times as well as a 20ns max propagation delay from input transition to the gate of the power .ETs. An internal Overlap Protection circuit prevents shootthrough from Vin to GND in the ma.
that allow fast switching and low propagation delays. .ast Switching Drives As the switching frequency of PWM controllers is increased to reduce power supply volume and cost, fast rise and fall times are necessary to minimize switching losses (TOP MOS.ET) and reduce dead-time (BOTTOM MOS.ET) losses. While low Rds_On MOS.ETs present a power saving in I2R losses, the MOS.ETs die area is larger and the effective input capacitance of the MOS.ET is increased. Often a 50% decrease in Rds_On doubles the effective input gate charge, which must be supplied by the driver. The Rds_On power savings can b.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SC1205 |
Semtech Corporation |
HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER | |
2 | SC1200 |
AMD |
(SC1201) Processor | |
3 | SC1202 |
Semtech Corporation |
600mA Low Dropout Positive Voltage Regulator | |
4 | SC1202A |
Semtech Corporation |
600mA Low Dropout Positive Voltage Regulator | |
5 | SC12 |
TRSYS |
SILICON CONTROLLED RECTIFIERS | |
6 | SC12-400-100 |
TRSYS |
SILICON CONTROLLED RECTIFIERS | |
7 | SC12-600-100 |
TRSYS |
SILICON CONTROLLED RECTIFIERS | |
8 | SC12-700-100 |
TRSYS |
SILICON CONTROLLED RECTIFIERS | |
9 | SC12-800-100 |
TRSYS |
SILICON CONTROLLED RECTIFIERS | |
10 | SC1210 |
Semtech |
High Speed- 12V/ Synchronous Power MOSFET Driver | |
11 | SC1211 |
Semtech Corporation |
Combi-SenseTM Synchronous MOSFET Driver | |
12 | SC1211VX |
Semtech |
High Speed - Combi-Sense - Synchronous MOSFET Driver for Mobile Applications |