SBR130S3 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF(AV) Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) 1.0 * 30 0.38 -65 to 125 Units A V V, typ o C A B MECHANICAL: * Molded Plastic SOD-323 package SOD-323 Catho.
are made possible in a single device:
Major ratings and characteristics Values Characteristics
IF(AV) Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) 1.0
* 30 0.38 -65 to 125
Units
A V V, typ o C
A B
MECHANICAL:
* Molded Plastic SOD-323 package SOD-323
Cathode Mark G Di A H B C D Min 2.30 1.60 0.25 1.15 0.10 0.85 0.20 Max 2.70 1.80 0.40 1.45 0.18 1.05 0.10 0.40
*Note: Device monuted on a glass epoxy board, Board size: 50mm x 50m, Land size: 6mm x 6mm
ELECTRICAL:
* Low Forward Voltage Drop
* Low Reverse Leakage
* Reliable High Temperature Operation
* Super Barrier Design
* .
NEW PRODUCT Features • Low Forward Voltage Drop • Low Reverse Leakage • Excellent High Temperature Stability • Patented.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SBR130SV |
Diodes |
SUPER BARRIER RECTIFIER | |
2 | SBR13003 |
SemiWell Semiconductor |
High Voltage Fast-Switching NPN Power Transistor | |
3 | SBR13003B1 |
WINSEMI SEMICONDUCTOR |
NPN Power Transistor | |
4 | SBR10 |
Sensor Switch |
SENSOR | |
5 | SBR10 |
Semtech Corporation |
(SBR05 - SBR30) Standard Recovery 1-Phase Silicon Bridge Rectifier Assembly | |
6 | SBR100-10J |
Sanyo Semicon Device |
SBR100-10J | |
7 | SBR100-10JS |
Sanyo Semicon Device |
100V 10A Rectifier | |
8 | SBR100-16JS |
Sanyo Semicon Device |
160V 10A Rectifier | |
9 | SBR10100 |
Secos |
10.0 Amp Schottky Barrier Rectifiers | |
10 | SBR10100CT |
Diodes Incorporated |
10A SBR Super Barrier Rectifier | |
11 | SBR10100CT |
SMC |
SCHOTTKY RECTIFIER | |
12 | SBR10100CTB |
Diodes Incorporated |
SUPER BARRIER RECTIFIER |