SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applications are in switching power supplies and protection circuit etc. FEATURES ∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low forward voltage drop ORDERING SPECIFICATIONS Part No. SBD10C100T SBD10C100F Package.
∗ Guard ring for Stress Protection ∗ High Surge Capacity ∗ Low power loss , high efficiency ∗ Low forward voltage drop ORDERING SPECIFICATIONS Part No. SBD10C100T SBD10C100F Package TO-220-3L TO-220F-3L Marking SBD10C100T SBD10C100F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Value 100 10 120 150 -40~150 Unit V A A °C °C THER.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SBD10C100F |
Silan Microelectronics |
100V SCHOTTKY RECTIFIER | |
2 | SBD10C150F |
Silan Microelectronics |
150V SCHOTTKY RECTIFIER | |
3 | SBD10C150T |
Silan Microelectronics |
150V SCHOTTKY RECTIFIER | |
4 | SBD10C45F |
Silan Microelectronics |
45V SCHOTTKY RECTIFIER | |
5 | SBD10C45MJ |
Silan Microelectronics |
45V SCHOTTKY RECTIFIER | |
6 | SBD10C45T |
Silan Microelectronics |
45V SCHOTTKY RECTIFIER | |
7 | SBD10C60F |
Silan Microelectronics |
60V SCHOTTKY RECTIFIER | |
8 | SBD10C60T |
Silan Microelectronics |
60V SCHOTTKY RECTIFIER | |
9 | SBD1030CT |
Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS | |
10 | SBD1035CT |
Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS | |
11 | SBD1040CT |
Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS | |
12 | SBD1045CT |
Mospec Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |