MEI Lead Free RoHS Compliant Dual Series Switching Diode • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BAV99LT1G SBAV99LT1G SOT–23 DEVICE MARKING ORDERING INFORMATION Device BAV99L.
ce Junction to Ambient Junction and Storage Temperature
1. FR
–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1 ANODE
3 CAHODE/ANODE
2 CATHODE
Symbol VR IF
I FM(surge) V RRM
I F(AV)
I FRM I FSM
Value 70 215 500 70
715
450
2.0 1.0 0.5
Unit Vdc mAdc mAdc
V
mA
mA A
Symbol PD
R θJA PD
R θJA T J , T stg
Max 225
1.8 556 300
2.4
417
–65 to +150
Unit mW
mW/°C °C/W mW
mW/°C
°C/W °C
MEI
Lead Free
RoHS Compliant
BAV99LT1G , SBAV99LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS Rev.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SBAV99L |
ON Semiconductor |
Dual Series Switching Diode | |
2 | SBAV99RWT1G |
ON Semiconductor |
Dual Series Switching Diodes | |
3 | SBAV99WT1 |
ON Semiconductor |
Dual Series Switching Diodes | |
4 | SBAV199L |
ON Semiconductor |
Dual Series Switching Diode | |
5 | SBAV70L |
ON Semiconductor |
Dual Switching Diode Common Cathode | |
6 | SBAV70W |
ON Semiconductor |
Dual Switching Diode Common Cathode | |
7 | SBA-4086 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
8 | SBA-4086Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
9 | SBA-4089 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
10 | SBA-4089Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
11 | SBA-5089 |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier | |
12 | SBA-5089Z |
Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier |