New Product SB1H90, SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance DO-204AL (DO-41) FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Very low leakage curr.
• High barrier technology for improved high TJ
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Very low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
90 V, 100 V
IFSM
50 A
VF 0.62 V
IR 1.0 μA
TJ max.
175 °C
TYPICAL APPLICATIONS For use in middle voltage high frequency inverters, freewheeling, dc-to-dc converte.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SB1H100 |
Vishay Siliconix |
High Voltage Schottky Rectifiers | |
2 | SB10-015C |
Sanyo Semicon Device |
15V/ 1A Rectifier | |
3 | SB10-015P |
Sanyo Semicon Device |
15V/ 1A Rectifier | |
4 | SB10-03A2 |
Sanyo Semicon Device |
30V/ 1.0A Rectifier | |
5 | SB10-03A2 |
ON Semiconductor |
Schottky Rectifier | |
6 | SB10-03A3 |
Sanyo Semicon Device |
30V/ 1.0A Rectifier | |
7 | SB10-03A3 |
ON Semiconductor |
Schottky Rectifier | |
8 | SB10-04A3 |
Sanyo Semicon Device |
40V/ 1.0A Rectifier | |
9 | SB10-05 |
Sanyo Semicon Device |
50V/ 1A Rectifier | |
10 | SB10-05A2 |
Sanyo Semicon Device |
50V/ 1.0A Rectifier | |
11 | SB10-05A3 |
Sanyo Semicon Device |
50V/ 1.0A Rectifier | |
12 | SB10-05PCP |
Sanyo Semicon Device |
50V/ 1A Rectifier |