SAP09N - Sanken electric

SAP09N BUILT-IN TEMPERATURE COMPENSATION DIODES / BUILT-IN EMITTER RESISTOR DARLINGTON

www.DataSheet4U.com SAP09N (Complement to type SAP09P) Equivalent circuit B C D R: 70Ω Typ. E S Emitter resistor RE: 0.22Ω Typ. Application: Audio sElectrical Characteristics Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE Conditions VCB =150V VEB = 5V IC =30mA VCE =4V, IC =6A IC =6A, IB =6mA IC =6A, IB =6mA VCE =20V, IC =40mA IF =2.5mA I.

Features

ot No. IC
  – VCE Characteristics (Typical) 10mA 2.5mA 2.0mA VCE(sat)
  – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) 3 10 IC
  – VBE Temperature Characteristics (VCE =4V) 10 1.5 mA 1.3mA 1.0m A A 1.8mA 0.8m 8 8 Collector Current IC (A) 0.5mA 6 2 IC =8A 6A 4A 1 Collector Current IC (A) 6 0.3mA 4 IB = 0.2mA 2 4 125°C 25°C DataSheet4U.com 2±0.1 +0.2 (36°) 7±0.2 22±0.3 23±0.3 28±0.3 2
  – 30°C DataShee 0 0 2 4 6 0 0.3 0.5 1 5 10 50 100 0 0 1 2 3 Collector-Emitter Voltage VCE (V) Base Current IB (mA) Base-Emitter Voltage VBE.