Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM S.
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 35.0 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 60 Watts Junction to Case Thermal Resistance o 2.80 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 125 V Drain to Source Voltage 125 V Gate to Source Voltage 20 V 2.5 A RF CHARACTERISTICS ( SYMBOL.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SA7411 |
Silan Microelectronics |
1CH AUDIO POWER AMPLIFIER | |
2 | SA7411S |
Silan Microelectronics |
1CH AUDIO POWER AMPLIFIER | |
3 | SA7412 |
Silan Microelectronics |
2CH AUDIO POWER AMPLIFIER | |
4 | SA741C |
Philips |
General purpose operational amplifier | |
5 | SA7454 |
Silan Microelectronics |
2 X 6W AUDIO POWER AMPLIFIER | |
6 | SA7454H |
Silan Microelectronics |
2 X 6W AUDIO POWER AMPLIFIER | |
7 | SA7496 |
Silan |
2-Channel Audio Power Amplifier | |
8 | SA7496L |
Silan |
2-Channel Audio Power Amplifier | |
9 | SA7496LS |
Silan Microelectronics |
2-Channel Audio Power Amplifier | |
10 | SA7 |
Rectron |
SURFACE MOUNT SILICON RECTIFIER | |
11 | SA7.0 |
MIC |
AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS | |
12 | SA7.0 |
Crydom |
Transient Voltage Suppression (TVS) Diodes |