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S8550MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 850 nm • Optical Ouput Power: 50 mW • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Vo.
• Lasing Mode Structure: multi mode
• Peak Wavelength : typ. 850 nm
• Optical Ouput Power: 50 mW
• Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode
Bottom View
Absolute Maximum Ratings (TC=25°C)
Item CW Output Power LD Reverse Voltage Operating Case Temperature Storage Temperature
Symbol
PO VrLD TC Tstg
Value 50 2
-10 … +50 -40 … +85
Unit mW
V °C °C
Specifications (TC=25°C, PO=50mW)
Item
Symbol
Min.
Optical Specifications
Center Wavelength FWHM Beam Divergence
*
Electrical Specifications
λC 830 θ║ θ┴ -
Thre.
S8550MG - BLUE ROCKET ELECTRONICS
SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features S8050MG 。。 Complementary pair with S.
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|---|---|---|---|---|
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