S8012R - INCHANGE

S8012R Thyristor

·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.

Features

ate voltage ITM= 12A IGT Gate-trigger current VD = 12 V; RL=33Ω VGT Gate-trigger voltage VD = 12 V; RL=33Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.02 0.5 mA 1 1.6 V 1 20 mA 1.5 V 1.3 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors S8012R NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipme.