The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a.
Intel PC-100 (3-3-3) or PC133 (3-3-3) compatible Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access precharge time Programmable burst lengths: 1, 2, or 4 using Interleaved Burst Addressing Auto Precharge and Auto Refresh modes 64ms, 4,096-cycle refresh quad-row refresh, (15.6µs/row) Self Refresh mode 1 LVTTL-compatible inputs and outputs Single +3.3V ±0.3V power supply The x16 devices are optimized for both single and dual rank DIMM applications. The x8 de.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S80016 |
Cooper Electronic Technologies |
Series 8000 Fuseblocks | |
2 | S8006DS2 |
Littelfuse |
Thyristors | |
3 | S8006DS3 |
Littelfuse |
Thyristors | |
4 | S8006LS2 |
Littelfuse |
Thyristors | |
5 | S8006LS3 |
Littelfuse |
Thyristors | |
6 | S8006NS2 |
Littelfuse |
Thyristors | |
7 | S8006NS3 |
Littelfuse |
Thyristors | |
8 | S8006RS2 |
Littelfuse |
Thyristors | |
9 | S8006RS3 |
Littelfuse |
Thyristors | |
10 | S8006VS2 |
Littelfuse |
Thyristors | |
11 | S8006VS3 |
Littelfuse |
Thyristors | |
12 | S8008DS1 |
Littelfuse |
Thyristors |