The S7I323684M and S7I321884M are 37,748,736-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for S7I323684M and 2,097,152 words by 18 bits for S7I321884M. Address, data inputs, and all control signals are synchronized to the input clock (K or K). Normally data outputs are synchronized to output clocks (C.
•1.8V+0.1V/-0.1V Power Supply.
•DLL circuitry for wide output data valid window and future fre-
quency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O
•Pipelined, double-data rate operation.
• Common data input/output bus.
• HSTL I/O
• Full data coherency, providing most current data.
• Synchronous pipeline read with self timed late write.
• Registered address, control and data input/output.
• DDR (Double Data Rate) Interface on read and write ports.
• Fixed 4-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
•Tw.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S7I323682M |
NETSOL |
1Mx36 & 2Mx18 DDRII CIO BL2 SRAM | |
2 | S7I321882M |
NETSOL |
1Mx36 & 2Mx18 DDRII CIO BL2 SRAM | |
3 | S7I321884M |
NETSOL |
1Mx36 & 2Mx18 DDRII CIO BL4 SRAM | |
4 | S7I161882M |
NETSOL |
512Kx36 & 1Mx18 DDRII CIO BL2 SRAM | |
5 | S7I161884M |
NETSOL |
512Kx36 & 1Mx18 DDRII CIO BL4 SRAM | |
6 | S7I163682M |
NETSOL |
512Kx36 & 1Mx18 DDRII CIO BL2 SRAM | |
7 | S7I163684M |
NETSOL |
512Kx36 & 1Mx18 DDRII CIO BL4 SRAM | |
8 | S7I641882M |
NETSOL |
2Mx36 & 4Mx18 DDRII CIO BL2 SRAM | |
9 | S7I641884M |
NETSOL |
2Mx36 & 4Mx18 DDRII CIO BL4 SRAM | |
10 | S7I643682M |
NETSOL |
2Mx36 & 4Mx18 DDRII CIO BL2 SRAM | |
11 | S7I643684M |
NETSOL |
2Mx36 & 4Mx18 DDRII CIO BL4 SRAM | |
12 | S70FL01GS |
Cypress Semiconductor |
1 Gbit (128 Mbyte) 3.0V SPI Flash |