S6304 SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 QC 65nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value.
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Junction temperature
VRM 1200
VR 1200
IF 20
*1
82
*2
IFSM
310
*3
62
*4
IFRM
77
*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj
*2 PW=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S6301 |
Rohm |
SiC Schottky Barrier Diode Bare Die | |
2 | S6302 |
Rohm |
SiC Schottky Barrier Diode Bare Die | |
3 | S6305MG |
Roithner LaserTechnik |
Red Laser Diode | |
4 | S6306 |
Rohm |
SiC Schottky Barrier Diode Bare Die | |
5 | S6307 |
ROHM |
SiC Schottky Barrier Diode | |
6 | S6310MG |
Roithner LaserTechnik |
Infrared Laser Diode | |
7 | S6370 |
Toshiba |
Low Power Switching Applications | |
8 | S63FH-XD01 |
Samsung |
Wide Plasma Display Module | |
9 | S63HW-XD04 |
Samsung |
Wide Plasma Display Module | |
10 | S63HW-XD05 |
Philips |
Colour Television Service Manual | |
11 | S6000-AL |
Coilcraft |
Magnetics | |
12 | S6006DS2 |
Littelfuse |
Thyristors |