S525 - Vishay Telefunken

S525 N-Channel MOSFET

S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance D Low noise figure 1 G 13 581 94 9280 D 2 3 12624 S525T Marking: LB Plastic case (SOT 23) 1=.

Features

D Integrated gate protection diodes D Low feedback capacitance D Low noise figure 1 G 13 581 94 9280 D 2 3 12624 S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate-source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol VDS ID ±IGSM Ptot TCh Tstg Value 20 30 10 200 150
  –55 to +150 Unit V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter T.