PD - 96347 IRFI4110GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) D 100V 3.7mΩ 4.5mΩ 72A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C.
perature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
W W/°C V V/ns °C
e
x
x
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
d
mJ A mJ
f
Typ.
–
–
–
–
–
–
Thermal Resistance
Symbol
RθJC RθJA Junction-to-Case
j
Parameter
Max.
2.46 65
Units
°C/W
Junction-to-Ambient
i
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01/11/11
Free Datasheet http://www.Datasheet4U.com
IRFI4110GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS
P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S300 |
Continental Device India Limited |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
2 | S3001 |
AUK |
5CH Motor Drive IC | |
3 | S30011 |
AUK |
5CH Motor Drive IC | |
4 | S300Y |
GeneSiC |
Silicon Standard Recovery Diode | |
5 | S300YR |
GeneSiC |
Silicon Standard Recovery Diode | |
6 | S300Z |
GeneSiC |
Silicon Standard Recovery Diode | |
7 | S300ZR |
GeneSiC |
Silicon Standard Recovery Diode | |
8 | S30-10N-1 |
HIGHLY |
PROXIMITY SWITCH | |
9 | S30-10N-2 |
HIGHLY |
PROXIMITY SWITCH | |
10 | S30-10P-1 |
HIGHLY |
PROXIMITY SWITCH | |
11 | S30-10P-2 |
HIGHLY |
PROXIMITY SWITCH | |
12 | S3028 |
Advanced Semiconductor |
SILICON ABRUPT VARACTOR DIODE |