TheS29C51002T/S29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done wi.
s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 35ms (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100mA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.5V s Self-timed write/erase operations with end-of-cycle detection
– DATA Polling
– Toggle Bit s CMOS and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S29C51002B |
SyncMOS |
2 MEGABIT / 5 VOLT CMOS FLASH MEMORY | |
2 | S29C51001B |
SyncMOS |
1 MEGABIT / 5 VOLT CMOS FLASH MEMORY | |
3 | S29C51001T |
SyncMOS |
1 MEGABIT / 5 VOLT CMOS FLASH MEMORY | |
4 | S29C51004B |
SyncMOS |
(S29C51004T / S29C51004B) 4M-Bit 5-Volt CMOS Flash Memory | |
5 | S29C51004T |
SyncMOS |
(S29C51004T / S29C51004B) 4M-Bit 5-Volt CMOS Flash Memory | |
6 | S29CD-G |
SPANSION |
Simultaneous Read/ Write Flash Memory | |
7 | S29CD-J |
SPANSION |
(S29CD-J / S29CL-J) Burst Mode Flash Memory | |
8 | S29CD016G |
SPANSION |
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory | |
9 | S29CD016G |
SPANSION |
Simultaneous Read/ Write Flash Memory | |
10 | S29CD016J |
SPANSION |
(S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory | |
11 | S29CD032G |
SPANSION |
CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT / SIMULTANEOUS READ /WRITE FLASH MEMORY | |
12 | S29CD032G |
SPANSION |
Simultaneous Read/ Write Flash Memory |