S2308 - Rohm

S2308 N-channel SiC power MOSFET

S2308 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 280mW 14A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplication • Solar inverters • DC/DC converters • Switch mode pow.

Features

1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source
*1 Body Diode lApplication
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Junction temperature Range of storage temperature Symbol VDSS ID
*1 ID,pulse
*2 VGSS VGSS-s.