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S112S01 Series S116S01 Series s Features 1. Compact, high radiation resin mold package 2. RMS ON-state current S112S01 Series : 12Arms at TC <= 70˚C ( With heat sink) S116S01 Series : 16Arms at TC <= 60˚C ( With heat sink) 3. Built-in zero-cross circuit (S112S02 / S212S02 / S116S02 / S216S02 ) 4. High repetitive peak OFF-state voltage S112S01 / S112S02 / S11.
1. Compact, high radiation resin mold package 2. RMS ON-state current S112S01 Series : 12Arms at TC <= 70˚C ( With heat sink) S116S01 Series : 16Arms at TC <= 60˚C ( With heat sink) 3. Built-in zero-cross circuit (S112S02 / S212S02 / S116S02 / S216S02 ) 4. High repetitive peak OFF-state voltage S112S01 / S112S02 / S116S01 / S116S02 VDRM : 400V S212S01 / S212S02 / S216S01 / S216S02 VDRM : 600V 5. Isolation voltage between input and output (Viso : 4 000Vrms ) 6. Recognized by UL, file No. E94758 S112S01 / S112S02 S116S01 / S116S02 7. Approved by CSA, No. 63705 S112S01 / S112S02 S116S01 / S116S02.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S216S02 |
Sharp |
SIP Type SSR |
|
| 2 | S216SE1 |
Sharp Electrionic Components |
SIP Type SSR for Medium Power Control |
|
| 3 | S216SE2 |
Sharp Electrionic Components |
SIP Type SSR for Medium Power Control |
|
| 4 | S2160 |
Microsemi Corporation |
Silicon Power Rectifier |
|
| 5 | S21 |
Microsemi Corporation |
Silicon Power Rectifier |
|
| 6 | S210 |
WON-TOP |
2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE |
|
| 7 | S210 |
Fairchild Semiconductor |
Schottky Rectifier |
|
| 8 | S210 |
Pan Jit International. |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes) |
|
| 9 | S210FA |
Fairchild Semiconductor |
Surface Mount Schottky Barrier Rectifiers |
|
| 10 | S21100 |
Microsemi Corporation |
Silicon Power Rectifier |
|
| 11 | S21120 |
Microsemi Corporation |
Silicon Power Rectifier |
|
| 12 | S21140 |
Microsemi Corporation |
Silicon Power Rectifier |
|