MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150℃ junction temperature. Typical application are in switching Mode Power Supplies such as adaptors, DC/DC converters, freewheeling and polarity pr.
*Low Forward Voltage. *Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *175℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction. *Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O *In compliance with EU RoHs 2002/95/EC directives *Mounting Torqure: 5 in-lbs.Max S20T150FB SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 150 VOLTS ITO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S20T150C |
Mospec Semiconductor |
Schottky Barrier Rectifiers | |
2 | S20T150CB |
Mospec Semiconductor |
Schottky Barrier Rectifiers | |
3 | S20T100C |
Mospec Semiconductor |
Dual Schottky Barrier Power Rectifiers | |
4 | S20T100CB |
Mospec Semiconductor |
Dual Schottky Barrier Power Rectifiers | |
5 | S20T100F |
Mospec Semiconductor |
Dual Schottky Barrier Power Rectifiers | |
6 | S20T100FB |
Mospec Semiconductor |
Dual Schottky Barrier Power Rectifiers | |
7 | S20 |
Microsemi Corporation |
Silicon Power Rectifier | |
8 | S2000 |
Toshiba |
Silicon NPN Transistor | |
9 | S2000 |
INCHANGE |
NPN Transistor | |
10 | S2000 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | S2000A |
Toshiba |
Silicon NPN Transistor | |
12 | S2000A |
SavantIC |
SILICON POWER TRANSISTOR |