S20K60T Fast Recovery Diodes 600V, 20A Feature High Voltage Low Noise Pb free terminal RoHS:Yes OUTLINE Package (House Name): MTO-3PT Package (JEDEC Code): TO-247AD Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Repetitive peak reverse voltage Average forward current Surge .
everse recovery time Reverse recovery time Reverse recovery time Total capacitance Thermal resistance VF VF IR trr trr trr Ct Rth(j-c) IF=20A, Pulse measurement IF=2A, Pulse measurement VR=600V, Pulse measurement IF=0.5A, IR=1.0A, 0.25IR IF=1.0A, VR=30V, di/dt=-50A/µs, 0.25IR IF=1.0A, VR=420V, di/dt=-50A/µs, 0.25IR f=1MHz, VR=10V Junction to case, With heatsink ※︓See the original Specifications Ratings MIN TYP MAX 1.3 1.5 0.83 10 95 72 84 105 0.8 Unit V V μA ns ns ns pF ℃/W Shindengen Electric Manufacturing Co., Ltd. 2/6 S20K60T_Rev.02(2022.03) CHARACTERISTIC DIAGRAMS Shindengen Elect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | S20K100V |
SHINDENGEN |
Fast Recovery Diode | |
2 | S20K140E2 |
EPCOS |
Leaded Varistors | |
3 | S20K150 |
EPCOS |
Leaded Varistors | |
4 | S20K275 |
Herrmann Kg |
Metaloxid Varistoren | |
5 | S20K275 |
Siemens |
Metaloxid Varistoren | |
6 | S20K275 |
Infineon Technologies |
Metaloxid Varistoren | |
7 | S20K300 |
EPCOS |
Leaded Varistors | |
8 | S20K320 |
EPCOS |
SIOV metal oxide varistors | |
9 | S20KxxxE2 |
EPCOS |
Leaded Varistors | |
10 | S20 |
Microsemi Corporation |
Silicon Power Rectifier | |
11 | S2000 |
Toshiba |
Silicon NPN Transistor | |
12 | S2000 |
INCHANGE |
NPN Transistor |