S2055AF - WS

S2055AF SILICON DIFFUSED POWER TRANSISTOR

SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s VCESM VCEO IC I.

Features

alue Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN Tmb 25 -55 MAX 1500 600 5 8 4 6 125 150 150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector-emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDIT.