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LOW VOLTAGE/POWER NARROW BAND FM IF S1T3361D INTRODUCTION The S1T3361D is designed for use in FM dual conversion communication. It contains a complete narrow band FM demodulation system operable to less than 2.5V supply voltage. This low-power narrow-band FM IF system provides the second converter, second IF, demodulator. Filter Amp and squelch circuitry f.
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• Low power consumption (4.0mA typ. at VCC = 4.0V) Excellent input sensitivity (-3dB limiting, 2.0µVrms typ.) Minimum number of external components required. Operating Voltage: 2.5 to 7.0V
16−SOP−225A
APPLICATIONS
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• Cordless phone (for home usage) FM dual conversion communications equipment
ORDERING INFORMATION
Device S1T3361D01-D0B0 S1T3361D01-S0B0
Package 16−DIP−300A 16−SOP−225A
Operating Temperature − 20°C to +70°C
1
S1T3361D
LOW VOLTAGE/POWER NARROW BAND FM IF
PIN CONFIGURATION
OSC
1 2 3 4 S1T3361D 5 6 7 8
16 15 14 13 12 11 10 9
RF INPUT GND
OSC MIXER OUTPUT VCC LIMI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S1T3361D01 |
Samsung semiconductor |
LOW VOLTAGE/POWER NARROW BAND FM IF |
|
| 2 | S1T |
MEI SEMI |
Surface Mount Glass Passivated Rectifier |
|
| 3 | S1T |
Diotec |
Standard Recovery SMD Rectifier Diodes |
|
| 4 | S1T |
EIC |
SURFACE MOUNT HIGH VOLTAGE RECTIFIER |
|
| 5 | S1T2410B01 |
Samsung semiconductor |
bipolar integrated circuit designed as a telephone bell replacement |
|
| 6 | S1T2410B02 |
Samsung semiconductor |
bipolar integrated circuit designed as telephone bell replacement |
|
| 7 | S1T2418D02 |
Samsung semiconductor |
TONE RINGER |
|
| 8 | S1T2418G01 |
Samsung semiconductor |
TONE RINGER |
|
| 9 | S1T2425A |
Samsung semiconductor |
SPEECH NETWORK WITH DIALER INTERFACE |
|
| 10 | S1T8501 |
Samsung semiconductor |
SPEECH NETWORK WITH DIALER INTERFACE |
|
| 11 | S1T8507C |
Samsung semiconductor |
compander - automatic gain control system |
|
| 12 | S1T8513A |
Samsung semiconductor |
FM IF RECEIVER |
|