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............ 4 5. ELECTRIC CHARATERISTICS ......... 5 6. FUCTIONAL DESCRIPTION ............. 6 7. TEST CIRCUIT.... 7 8. APPLICATION CIR.
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Digital & Analog Co., Ltd.
(Rev. 1.1) -2-
S1A0051
FET Driver for Class-D PWM Amp
1. INTRODUCTION
◎ FET (GATE) Driver for CLASS-D Amp ◎ Schmitt Triggered Input ◎ Totem-Pole Structured Output Stage ◎ Four Independent Power MOSFET Gate Drivers ◎ Operating Voltage : 10 ~ 12V (Single Power), ± 5.0V
– ± 6.0V(Dual Power) ◎ High Performance for Switching Characteristics ○ Typically 15ns for rising/falling time with 1nF load ○ Typically 20ns for propagation delay time with 1nF load ◎ BiCMOS Technology / 16 ETSSOP
2. BLOCK DIAGRAM
1 VCC 2 3 NC Driver1 15 16 VCC1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S1A0067X01 |
Samsung semiconductor |
4.6W AUDIO POWER AMP |
|
| 2 | S1A0071 |
Digital & Analog |
Audio Processor |
|
| 3 | S1A0134A01 |
Samsung semiconductor |
DUAL PRE-POWER AMP |
|
| 4 | S1A0136A01 |
Samsung semiconductor |
DUAL PRE-POWER AMP WITH VOLUME CONTROLLER |
|
| 5 | S1A0211X01 |
Samsung semiconductor |
DUAL LOW NOISE EQ AMP |
|
| 6 | S1A0234B01 |
Samsung semiconductor |
5 BAND DUAL GRAPHIC EQ AMP |
|
| 7 | S1A0241A01 |
Samsung semiconductor |
DUAL EQ AMP WITH ALC |
|
| 8 | S1A0291X01 |
Samsung semiconductor |
PB/REC PRE AMP FOR 2 DECK |
|
| 9 | S1A0386A01 |
Samsung semiconductor |
LOW VOLTAGE AUDIO POWER AMP |
|
| 10 | S1A0426C01 |
Samsung semiconductor |
AM/FM 1 CHIP RADIO |
|
| 11 | S1A0426C02 |
Samsung semiconductor |
AM/FM 1 CHIP RADIO |
|
| 12 | S1A0427B01 |
Samsung semiconductor |
AM/FM 1 CHIP RADIO |
|