Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha.
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
Ordering Information
Device
LP9435LT1G S-LP9435LT1G
LP9435LT3G S-LP9435LT3G
Marking
P94 P94
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP9435LT1G S-LP9435LT1G
3
1 2
SOT
– 23 (TO
–236AB)
3D
G 1 2S
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise n.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S-LP2301ALT1G |
LRC |
P-Channel MOSFET |
|
| 2 | S-LP2305DSLT1G |
LRC |
P-Channel MOSFET |
|
| 3 | S-LP3401LT1G |
LRC |
P-Channel MOSFET |
|
| 4 | S-LP3407LT1G |
LRC |
P-Channel MOSFET |
|
| 5 | S-LP3415ELT1G |
LRC |
P-Channel MOSFET |
|
| 6 | S-L1SS360TT1G |
LRC |
Monolithic Dual Switching Diode |
|
| 7 | S-L1SS400CST5G |
Leshan Radio Company |
Switching diode |
|
| 8 | S-L1SS400T1G |
Leshan Radio Company |
Switching Diode |
|
| 9 | S-L2980 |
ABLIC |
CMOS VOLTAGE REGULATOR |
|
| 10 | S-L2980 |
Seiko Instruments |
High Ripple Rejection Low Dropout CMOS Voltage Regulator |
|
| 11 | S-L2985 |
Seiko Instruments |
High Ripple Rejection WLP Package Low Dropout CMOS Voltage Regulator |
|
| 12 | S-L2N7002DMT1G |
LRC |
Small Signal MOSFET |
|