D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain.
• 30V/70A,
RDS (ON) =3.3mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
Pin Description
D
G S
TO252
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Cont.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RU3070M |
Ruichips |
N-Channel Advanced Power MOSFET | |
2 | RU3075L |
Ruichips |
N-Channel Advanced Power MOSFET | |
3 | RU30 |
Sanken electric |
Fast-Recovery Rectifier Diodes | |
4 | RU30100L |
Ruichips |
N-Channel Advanced Power MOSFET | |
5 | RU30100R |
Ruichips |
N-Channel Advanced Power MOSFET | |
6 | RU30105L |
Ruichips |
N-Channel Advanced Power MOSFET | |
7 | RU30105R |
Ruichips |
N-Channel Advanced Power MOSFET | |
8 | RU30106L |
Ruichips |
N-Channel Advanced Power MOSFET | |
9 | RU3010H |
Ruichips |
N-Channel Advanced Power MOSFET | |
10 | RU30120L |
Ruichips |
N-Channel Advanced Power MOSFET | |
11 | RU30120M |
Ruichips |
N-Channel Advanced Power MOSFET | |
12 | RU30120R |
Ruichips |
N-Channel Advanced Power MOSFET |