RU3013H - Ruichips

RU3013H N-Channel Advanced Power MOSFET

SOP-8 Applications • SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Curr.

Features

• 30V/11A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =24mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available Pin Description SOP-8 Applications
• SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VG.