RTQ020N03 - Rohm

RTQ020N03 MOSFET

Transistors 2.5V Drive Nch MOS FET RTQ020N03 RTQ020N03 zStructure Silicon N-channel MOS FET zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). zApplications Switching zExternal dimensions (Unit : mm) TSMT6 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark (1) .

Features

1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). zApplications Switching zExternal dimensions (Unit : mm) TSMT6 2.9 1.9 0.95 0.95 (6) (5) (4) 1.0MAX 0.85 0.7 1.6 2.8 0.3~0.6 1pin mark (1) (2) (3) 0~0.1 0.4 0.16 Each lead has same dimensions Abbreviated symbol : QS zPackaging specifications Package Type Code Basic ordering unit (pieces) RTQ020N03 Taping TR 3000 zInner circuit (6) (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (3) (4) Source (5) Drain (6) Drain zAbsolute m.