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RTE002P02 - Rohm

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RTE002P02 2.5V Drive Pch MOS FET

www.DataSheet4U.com RTE002P02 Transistors 2.5V Drive Pch MOS FET RTE002P02 zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm) EMT3 1.6 0.3 0.7 0.55 zFeatures 1) Low On-resistance. 2) Small package (EMT3). 3) 2.5V drive. (1)Source (3) 0.8 (2) (1) 1.6 0.2 0.5 0.5 1.0 0.2 0.15 zApplications Switching zPackage specifications Package .

Features

1) Low On-resistance. 2) Small package (EMT3). 3) 2.5V drive. (1)Source (3) 0.8 (2) (1) 1.6 0.2 0.5 0.5 1.0 0.2 0.15 zApplications Switching zPackage specifications Package Type RTE002P02 Code Basic ordering unit (pieces) Taping TL 3000 (2)Gate (3)Drain Abbreviated symbol : TW zInner circuit (3) (2) ∗2 ∗1 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Eac.

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