RT5N430C - Isahaya Electronics

RT5N430C Transistor

OUTLINE DRAWING RT5N430C is a one chip transistor with built-in bias resistor, PNP type is RT5P430C. 2.8 0.65 1.5 0.65 Unit: mm 2.8 1.90 0.95 0.95 0.4 FEATURE Built-in bias resistor （R1=4.7kΩ） High collector current （Ic=0.5A） Mini package for easy mounting ① ②③ APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 1.1 0..

Features

sat) GI R1 fT C to B break down voltage C to E break down voltage E to B break down voltage Collector cut off current Emitter cut off current C to E saturation voltage DC forward current gain Input resistor Gain band width product TEST CONDITION IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=50mA，IB=2.5mA VCE=5V，IE=50mA ― VCE=10V，IE=-50mA，f=100MHz MIN 50 50 5 ― ― ― 100 3.29 ― LIMIT TYP ― ― ― ― ― ― 250 4.7 200 MAX ― ― ― 0.5 0.5 0.3 600 6.11 ― UNIT V V V μA μA V ― kΩ MHz ISAHAYA ELECTRONICS CORPORATION COLLECTORDISSIPPAc(TImOW)N Pc(mW) PRELIMINARY TYPICAL CHARACTERISTICS(Ta=25℃) COLLECTO－RDIS.